Datasheet

www.irf.com 1
07/09/08
IRF8910PbF
HEXFET
®
Power MOSFET
Notes  through  are on page 10
SO-8
Benefits
l Very Low R
DS(on)
at 4.5V V
GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V V
GS
Max. Gate Rating
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
Applications
l Dual SO-8 MOSFET for POL
converters in desktop, servers,
graphics cards, game consoles
and set-top box
l Lead-Free
V
DSS
R
DS(on)
max I
D
20V
13.4m @V
GS
= 10V
10A
Absolute Maximum Ratin
g
s
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation W
P
D
@T
A
= 70°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
R
θJL
Junction-to-Drain Lead ––– 42 °C/W
R
θJA
Junction-to-Ambient
––– 62.5
Max.
10
8.3
82
± 20
20
-55 to + 150
2.0
0.016
1.3
PD -95673A