Datasheet

IRF9540NSPbF
IRF9540NLPbF
HEXFET
®
Power MOSFET
PD - 96030
V
DSS
= -100V
R
DS(on)
= 117m
I
D
= -23A
l Advanced Process Technology
l Ultra Low On-Resistance
l 150°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Some Parameters are Different from
IRF9540NS/L
l P-Channel
l Lead-Free
09/30/05
S
D
G
www.irf.com 1
D
2
Pak
IRF9540NSPbF
TO-262
IRF9540NLPbF
S
G
S
D
G
D
GDS
Gate Drain Source
Description
Features of this design are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in a wide
variety of other applications.
D
D
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V A
I
D
@ T
C
= 100°C
Continuous Drain Current, VGS @ -10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Maximum Power Dissipation W
P
D
@T
C
= 25°C
Maximum Power Dissipation
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
dv/dt Peak Diode Recovery dv/dt
V/ns
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case –––
1.1
°C/W
R
θJA
Junction-to-Ambient (PCB Mount, steady state)
––– 40
110
0.9
± 20
11
84
-14
300 (1.6mm from case )
-55 to + 150
-13
Max.
-23
-14
-92
3.1

Summary of content (11 pages)