Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRFB3006PBF, MOSFET

HEXFET

Power MOSFET

Benefits

l Improved Gate, Avalanche and Dynamic

dV/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

l RoHS Compliant, Halogen-Free

Applications

l High Efficiency Synchronous Rectification

in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

GDS

Gate Drain Source

TO-220AB

DSS

60V

DS(on)

typ.

2.1m

max.

2.5m

(Silicon Limited)

270A

(Package Limited)

195A

Absolute Maximum Ratings

Symbol

Parameter

Units

@ T

= 25°C Continuous Drain Current, V

@ 10V (Silicon Limited)

@ T

= 100°C Continuous Drain Current, V

@ 10V (Silicon Limited)

@ T

= 25°C Continuous Drain Current, V

@ 10V (Wire Bond Limited)

Pulsed Drain Current

= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

Gate-to-Source Voltage

dv/dt

Peak Diode Recovery

V/ns

Operating Junction and

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

AS (Thermally limited)

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Thermal Resistance

Symbol Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 0.4

θCS

Case-to-Sink, Flat Greased Surface 0.50 ––– °C/W

θJA

Junction-to-Ambient ––– 62

-55 to + 175

± 20

2.5

10lb in (1.1N m)

Max.

270

190

1080

195

°C

300

320

See Fig. 14, 15, 22a, 22b,

375

IRFB3006PbF

Form Quantity

IRFB3006PbF TO-220 Tube 50 IRFB3006PbF

Base Part Number Package Type

Standard Pack

Orderable Part Number

Summary of content (9 pages)

PAGE 1
IRFB3006PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l RoHS Compliant, Halogen-Free VDSS RDS(on) typ. max. ID (Silicon Limited) 60V 2.1m: 2.
PAGE 2
IRFB3006PbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance RG Min. Typ. Max. Units 60 ––– ––– 2.0 ––– ––– ––– ––– ––– ––– 0.07 2.1 ––– ––– ––– ––– ––– 2.0 ––– ––– 2.5 4.
PAGE 3
IRFB3006PbF 1000 1000 100 BOTTOM 10 3.5V BOTTOM 100 3.5V ≤ 60μs PULSE WIDTH Tj = 175°C ≤ 60μs PULSE WIDTH Tj = 25°C 10 1 0.1 1 10 0.1 100 Fig 1. Typical Output Characteristics 100 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) TJ = 175°C 100 TJ = 25°C 10 VDS = 25V ≤ 60μs PULSE WIDTH 1 2.0 3.0 4.0 5.0 6.0 ID = 170A VGS = 10V 2.0 1.5 1.0 0.5 7.
PAGE 4
IRFB3006PbF 10000 TJ = 175°C ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 1000 100 10 TJ = 25°C 1 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 100μsec 100 LIMITED BY PACKAGE 10 10msec 1 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 0.0 0.4 0.8 1.2 1.6 0.1 2.0 LIMITED BY PACKAGE ID , Drain Current (A) 250 200 150 100 50 0 75 100 125 150 175 V(BR)DSS , Drain-to-Source Breakdown Voltage 300 50 10 100 Fig 8. Maximum Safe Operating Area Fig 7.
PAGE 5
IRFB3006PbF Thermal Response ( ZthJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 R1 R1 0.02 0.01 τJ τJ τ1 R2 R2 τC τ1 τ2 SINGLE PULSE ( THERMAL RESPONSE ) τι (sec) 0.175365 0.000343 τ2 0.22547 Ci= τi/Ri C 0.001 Ri (°C/W) 0.006073 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13.
PAGE 6
IRFB3006PbF 20 ID = 1.0A ID = 1.0mA ID = 250μA 3.5 16 3.0 IRRM - (A) VGS(th) Gate threshold Voltage (V) 4.0 2.5 12 8 2.0 IF = 112A VR = 51V 4 1.5 TJ = 125°C TJ = 25°C 0 1.0 -75 -50 -25 0 25 50 75 100 100 125 150 175 200 300 400 500 600 700 800 dif / dt - (A / μs) TJ , Temperature ( °C ) Fig. 17 - Typical Recovery Current vs. dif/dt Fig 16. Threshold Voltage Vs.
PAGE 7
IRFB3006PbF Driver Gate Drive D.U.T - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D= Period P.W. + + - Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRFB3006PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER IRFB3006 PYWW? LC LC OR DATE CODE P = LEAD-FREE Y = LAST DIGIT OF YEAR WW = WORK WEEK ? = ASSEMBLY SITE CODE INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER IRFB3006 YWWP LC LC DATE CODE Y = LAST DIGIT OF YEAR WW = WORK WEEK P = LEAD-FREE TO-220AB packages are not recommended for Surface Mount Application.
PAGE 9
IRFB3006PbF Qualification information† Qualification level Moisture Sensitivity Level RoHS compliant Industrial (per JEDEC JESD47F††guidelines) TO-220 Not applicable Yes Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/ Applicable version of JEDEC standard at the time of product release. Revision History Date Comment 4/23/2014 • Updated data sheet with new IR corporate template.