Datasheet

Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 31
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 21 A
I
DM
Pulsed Drain Current  124
P
D
@T
A
= 25°C Power Dissipation  3.1 W
P
D
@T
C
= 25°C Power Dissipation 200
Linear Derating Factor 1.3 W/°C
V
GS
Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt  2.1 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
www.irf.com 1
2/14/00
IRFB31N20D
IRFS31N20D
IRFSL31N20D
SMPS MOSFET
HEXFET
®
Power MOSFET
l High frequency DC-DC converters
Benefits
Applications
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
V
DSS
R
DS(on)
max I
D
200V 0.082Ω 31A
Typical SMPS Topologies
l Telecom 48V Input Forward Converters
Absolute Maximum Ratings
Notes  through  are on page 11
D
2
Pak
IRFS31N20D
TO-220AB
IRFB31N20D
TO-262
IRFSL31N20D
PD- 93805B