Datasheet

09/22/11
www.irf.com 1
HEXFET
®
Power MOSFET
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
PD - 97727
IRFB3256PbF
S
D
G
V
DSS
60V
R
DS(on)
typ.
2.7m
Ω
max.
3.4m
Ω
I
D (Silicon Limited)
206A
I
D
(Package Limited)
75A
GDS
Gate Drain Source
TO-220AB
S
D
G
D
Absolute Maximum Ratings
Symbol
Parameter
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
–––
0.50 °C/W
R
θ
CS
Case-to-Sink, Flat Greased Surface
0.50 –––
R
θJA
Junction-to-Ambient
––– 62
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
-55 to + 175
± 20
2.0
Max.
206
172
820
75
A
°C
300 (1.6mm from case)
340
See Fig. 14, 15, 22a, 22b
300
3.3
10lbf
in (1.1N m)