Datasheet

08/19/11
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
www.irf.com 1
IRFB3307ZPbF
IRFS3307ZPbF
IRFSL3307ZPbF
Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
HEXFET
®
Power MOSFET
GDS
Gate Drain Source
S
D
G
D
S
G
D
S
D
G
TO-220AB
IRFB3307ZPbF
D
2
Pak
IRFS3307ZPbF
TO-262
IRFSL3307ZPbF
S
D
G
D
PD - 97214D
V
DSS
75V
R
DS(on)
typ.
4.6m
Ω
max.
5.8m
Ω
I
D (Silicon Limited)
128A
I
D (Package Limited)
120A
Absolute Maximum Ratings
Symbol
Parameter
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
V/ns
T
J
Operating Junction and
°C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
R
θJC
Junction-to-Case
–––
0.65
R
θCS
Case-to-Sink, Flat Greased Surface , TO-220
0.50 ––– °C/W
R
θJA
Junction-to-Ambient, TO-220
––– 62
R
θ
JA
Junction-to-Ambient (PCB Mount) , D
2
Pak
–––
40
See Fig. 14, 15, 22a, 22b
140
230
6.7
-55 to + 175
± 20
1.5
10lbf
in (1.1N m)
300
Max.
128
90
512
120