Datasheet

02/29/08
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
www.irf.com 1
Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
HEXFET
®
Power MOSFET
S
D
G
PD - 97310
GDS
Gate Drain Source
TO-220AB
IRFB3806PbF
D
S
D
G
D
D
S
G
D
2
Pak
IRFS3806PbF
TO-262
IRFSL3806PbF
S
D
G
IRFB3806PbF
IRFS3806PbF
IRFSL3806PbF
V
DSS
60V
R
DS
(
on
)
typ.
12.6m
Ω
max. 15.8m
Ω
I
D
43A
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, VGS @ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
e
V/ns
T
J
Operating Junction and
°C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
d
mJ
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
f
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
j
–––
2.12
R
θ
CS
Case-to-Sink, Flat Greased Surface, TO-220
0.50 ––– °C/W
R
θ
JA
Junction-to-Ambient, TO-220
ij
––– 62
R
θ
JA
Junction-to-Ambient
(
PCB Mount
)
, D
2
Pak
ij
––– 40
300
Max.
43
31
170
73
25
7.1
71
24
-55 to + 175
± 20
0.47
10lb
x
in (1.1N
x
m)