Datasheet

07/07/11
Benefits
l Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
www.irf.com 1
IRFB4110PbF
HEXFET
®
Power MOSFET
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
S
D
G
TO-220AB
D
GDS
Gate Drain Source
S
D
G
V
DSS
100V
R
DS(on)
typ.
3.7m
max.
4.5m
D (Silicon Limited)
180A
I
D (Package Limited)
120A
Absolute Maximum Ratings
Symbol
Parameter
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
V/ns
T
J
Operating Junction and
°C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
R
θ
JC
Junction-to-Case
––– 0.402
R
θCS
Case-to-Sink, Flat Greased Surface
0.50 ––– °C/W
R
θ
JA
Junction-to-Ambient
––– 62
300
Max.
180
130
670
120
190
See Fig. 14, 15, 22a, 22b
370
5.3
-55 to + 175
± 20
2.5
10lb
in (1.1N m)
PD - 97061D

Summary of content (8 pages)