Datasheet
07/22/11
www.irf.com 1
HEXFET
®
Power MOSFET
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
S
D
G
GDS
Gate Drain Source
IRFB4115PbF
TO-220AB
G
D
S
V
DSS
150V
R
DS(on)
typ.
9.3m
Ω
max.
11m
Ω
I
D
(Silicon Limited)
104A
PD - 97354B
Absolute Maximum Ratings
Symbol
Parameter
Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
dv/dt Peak Diode Recovery
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case ––– 0.40
R
θ
CS
Case-to-Sink, Flat Greased Surface 0.50 ––– °C/W
R
θ
JA
Junction-to-Ambient ––– 62
830
380
18
10lb
in (1.1N m)
A
°C
300
-55 to + 175
± 20
2.5
Max.
104
74
420