Datasheet

IRFB4137PbF
1
www.irf.com © 2012 International Rectifier October 30, 2012
HEXFET
®
Power MOSFET
D
S
G
TO-220Pak
G D S
Gate Drain Source
Application
 High Efficiency Synchronous Rectification in SMPS
 Uninterruptible Power Supply
High Speed Power Switching
 Hard Switched and High Frequency Circuits
Benefits
 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
 Fully Characterized Capacitance and Avalanche SOA
 Enhanced body diode dV/dt and dI/dt Capability
 Lead-Free, RoHS Compliant
Base part number Package Type
Standard Pack Orderable Part Number
Form Quantity
IRFB4137PbF TO-220Pak Tube 50 IRFB4137PbF
V
DSS
300V
R
DS(on) typ.
56m
max
69m
I
D
38A
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 38
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 27
I
DM
Pulsed Drain Current  152
P
D
@T
C
= 25°C Maximum Power Dissipation 341 W
Linear Derating Factor 2.3 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 8.9 V/ns
T
J
T
STG
Operating Junction and
Storage Temperature Range
-55 to + 175 
Soldering Temperature, for 10 seconds
(1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy 
414
mJ
Thermal Resistance 
Parameter Typ. Max. Units
R

JC
Junction-to-Case 
––– 0.44
°C/W
R

CS
Case-to-Sink, Flat Greased Surface
0.50 –––
R

JA
Junction-to-Ambient 
––– 62
°C 
S
D
G
