Datasheet

www.irf.com 1
9/16/05
IRFB4212PbF
Notes  through  are on page 2
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
PD - 96918A
S
D
G
DIGITAL AUDIO MOSFET
TO-220AB
Features
• Key parameters optimized for Class-D audio
amplifier applications
• Low R
DSON
for improved efficiency
• Low Q
G
and Q
SW
for better THD and improved
efficiency
• Low Q
RR
for better THD and lower EMI
• 175°C operating junction temperature for
ruggedness
• Can deliver up to 150W per channel into 4Ω load in
half-bridge topology
V
DS
100 V
R
DS(ON)
typ. @ 10V
72.5
m:
Q
g
typ.
15 nC
Q
sw
typ.
8.3 nC
R
G(int)
typ.
2.2 Ω
T
J
max
175 °C
Key Parameters
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current c
P
D
@T
C
= 25°C
Power Dissipation f
W
P
D
@T
C
= 100°C
Power Dissipation f
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case f
––– 2.5
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient f
––– 62
Max.
13
57
±20
100
18
60
30
0.4
10lbxin (1.1Nxm)
-55 to + 175
300