Datasheet

4/23/12
www.irf.com 1
HEXFET
®
Power MOSFET
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
IRFB4310ZPbF
IRFS4310ZPbF
IRFSL4310ZPbF
D
2
Pak
IRFS4310ZPbF
TO-220AB
IRFB4310ZPbF
TO-262
IRFSL4310ZPbF
S
D
G
S
D
G
S
D
G
D
D
D
GDS
Gate Drain Source
S
D
G
V
DSS
100V
R
DS(on)
typ.
4.8m
:
max.
6.0m
:
I
D
(Silicon Limited)
127A
c
I
D
(Package Limited)
120A
Absolute Maximum Ratings
Symbol
Parameter
Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
I
DM
Pulsed Drain Current
d
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
f
V/ns
T
J
Operating Junction and
°C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
e
mJ
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
g
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
R

JC
Junction-to-Case
k –––
0.6
R

CS
Case-to-Sink, Flat Greased Surface , TO-220
0.50 ––– °C/W
R

JA
Junction-to-Ambient, TO-220
k ––– 62
R

JA
Junction-to-Ambient (PCB Mount) , D
2
Pak
jk
––– 40
475
See Fig. 14, 15, 22a, 22b,
250
18
-55 to + 175
± 20
1.7
10lb
x
in (1.1N
x
m)
300
Max.
127
c
90
c
560
120
PD - 97115D