Datasheet

12/1/10
www.irf.com 1
HEXFET
®
Power MOSFET
S
D
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
D
2
Pak
IRFS4410ZPbF
TO-220AB
IRFB4410ZPbF
TO-262
IRFSL4410ZPbF
S
D
G
S
D
G
S
D
G
D
D
D
IRFB4410ZPbF
IRFS4410ZPbF
IRFSL4410ZPbF
GDS
Gate Drain Source
V
DSS
100V
R
DS
(
on
)
typ.
7.2m
max.
9.0m
I
D
(
Silicon Limited
)
97A
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
V/ns
T
J
Operating Junction and
°C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Sin
g
le Pulse Avalanche Ener
g
y
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Ener
g
y
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJC
Junction-to-Case
–––
0.65
R
θCS
Case-to-Sink, Flat Greased Surface , TO-220
0.50 ––– °C/W
R
θJA
Junction-to-Ambient, TO-220
––– 62
R
θJA
Junction-to-Ambient (PCB Mount) , D
2
Pak
––– 40
242
See Fig. 14, 15, 22a, 22b,
230
16
-55 to + 175
± 20
1.5
10lb in (1.1N m)
300
Max.
97
69
390
PD - 97278D