Datasheet

09/05/08
www.irf.com 1
HEXFET
®
Power MOSFET
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
S
D
G
IRFB4620PbF
GDS
Gate Drain Source
TO-220AB
IRFB4620PbF
V
DSS
200V
R
DS(on)
typ.
60m
max.
72.5m
I
D
25A
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
V/ns
T
J
Operating Junction and
°C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Sin
g
le Pulse Avalanche Ener
g
y
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Ener
g
y
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJC
Junction-to-Case
–––
1.045
°C/W
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50
R
θJA
Junction-to-Ambient (PCB Mount)
––– 62
300
Max.
25
18
100
113
See Fig. 14, 15, 22a, 22b,
144
54
-55 to + 175
± 20
0.96
10lb
in (1.1N m)
PD -96172