Datasheet
www.irf.com 1
09/05/08
IRFB5620PbF
Notes through are on page 2
DIGITAL AUDIO MOSFET
Features
• Key Parameters Optimized for Class-D Audio
Amplifier Applications
• Low R
DSON
for Improved Efficiency
• Low Q
G
and Q
SW
for Better THD and Improved
Efficiency
• Low Q
RR
for Better THD and Lower EMI
• 175°C Operating Junction Temperature for
Ruggedness
• Can Deliver up to 300W per Channel into 8Ω Load in
Half-Bridge Configuration Amplifier
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
S
D
G
TO-220AB
D
S
D
G
GDS
Gate Drain Source
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Power Dissipation
P
D
@T
C
= 100°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case
––– 1.045
R
θ
CS
Case-to-Sink, Flat, Greased Surface 0.50 –––
R
θJA
Junction-to-Ambient
––– 62
°C/W
°C
A
V
W
144
72
0.96
10lb in (1.1N m)
-55 to + 175
300
Max.
18
100
±20
200
25
V
DS
200 V
R
DS(ON)
typ. @ 10V
60
m
Q
g
typ.
25 nC
Q
sw
typ.
9.8 nC
R
G(int)
typ.
2.6 Ω
T
J
max
175 °C
Key Parameters
PD - 96174