Datasheet

HEXFET
®
Power MOSFET
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l RoHS Compliant, Halogen-Free*
GDS
Gate Drain Source
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Maximum Drain Current vs. Case Temperature
Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
l DC/AC Inverters
25 50 75 100 125 150 175
T
C
, Case Temperature (°C)
0
50
100
150
200
250
300
350
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Limited By Package
V
DSS
40V
R
DS(on)
typ.
1.25m
Ω
max. 1.6mΩ
I
D
(Silicon Limited)
317A
I
D
(Package Limited)
195A
2 4 6 8 10 12 14 16 18 20
V
GS,
Gate -to -Source Voltage (V)
0
1
2
3
4
5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
I
D
= 100A
T
J
= 25°C
T
J
= 125°C
D
S
G
TO-220AB
IRFB7434PbF
S
D
G
D
StrongIRFET
IRFB7434PbF
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 18, 2014
Form
Quantity
IRFB7434PbF TO-220
Tube
50
IRFB7434PbF
Base Part Number Package Type
Standard Pack
Orderable Part Number