Datasheet

HEXFET
®
Power MOSFET
GDS
Gate Drain Source
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Maximum Drain Current vs. Case Temperature
Benefits
l Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l RoHS Compliant, Halogen-Free*
Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
l DC/AC Inverters
4 6 8 10 12 14 16 18 20
V
GS,
Gate -to -Source Voltage (V)
1.0
2.0
3.0
4.0
5.0
6.0
7.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
I
D
= 100A
T
J
= 25°C
T
J
= 125°C
D
S
G
TO-220AB
IRFB7440PbF
S
D
G
D
25 50 75 100 125 150 175
T
C
, Case Temperature (°C)
0
50
100
150
200
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Limited By Package
IRFB7440PbF
StrongIRFET
Form Quantity
IRFB7440PbF TO-220 Tube 50 IRFB7440PbF
Base Part Number Package Type Standard Pack Complete Part Number
V
DSS
40V
R
DS(on)
typ.
2.0m
Ω
max. 2.5m
Ω
I
D
172A
I
D
(Package Limited)
120A
1
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