Datasheet

StrongIRFET™
IRFB7540PbF
IRFS7540PbF
IRFSL7540PbF
1
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback November 6, 2014
HEXFET
®
Power MOSFET
D
S
G
Application
 Brushed Motor drive applications
 BLDC Motor drive applications
 Battery powered circuits
 Half-bridge and full-bridge topologies
 Synchronous rectifier applications
 Resonant mode power supplies
 OR-ing and redundant power switches
 DC/DC and AC/DC converters
 DC/AC Inverters
Benefits
 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
 Fully Characterized Capacitance and Avalanche SOA
 Enhanced body diode dV/dt and dI/dt Capability
 Lead-Free, RoHS Compliant
V
DSS
60V
R
DS(on)
typ.
4.2m
max
5.1m
I
D
110A
4 6 8 10 12 14 16 18 20
V
GS,
Gate -to -Source Voltage (V)
2
4
6
8
10
12
14
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
)
I
D
= 65A
T
J
= 25°C
T
J
= 125°C
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Maximum Drain Current vs. Case Temperature
TO-220AB
IRFB7540PbF
D2Pak
IRFS7540PbF
TO-262
IRFSL7540PbF
S
D
G
S
D
G
S
D
G
D
G D S
Gate Drain Source
Base part number Package Type
Standard Pack
Form Quantity
IRFB7540PbF TO-220 Tube 50 IRFB7540PbF
IRFSL7540PbF TO-262 Tube 50 IRFSL7540PbF
IRFS7540PbF D2-Pak
Tube 50 IRFS7540PbF
Tape and Reel Left 800 IRFS7540TRLPbF
Orderable Part Number
25 50 75 100 125 150 175
T
C
, Case Temperature (°C)
0
20
40
60
80
100
120
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)

Summary of content (13 pages)