Datasheet
StrongIRFET™
IRFB7545PbF
1
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback November 5, 2014
HEXFET
®
Power MOSFET
D
S
G
Application
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
Benefits
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Lead-free, RoHS compliant
V
DSS
60V
R
DS(on)
typ.
4.9m
max
5.9m
I
D
95A
Fig 2. Maximum Drain Current vs. Case Temperature
TO-220AB
S
D
G
G D S
Gate Drain Source
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRFB7545PbF TO-220 Tube 50 IRFB7545PbF
4 6 8 10 12 14 16 18 20
V
GS,
Gate -to -Source Voltage (V)
2
4
6
8
10
12
14
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
)
I
D
= 57A
T
J
= 25°C
T
J
= 125°C
Fig 1. Typical On-Resistance vs. Gate Voltage
25 50 75 100 125 150 175
T
C
, Case Temperature (°C)
0
20
40
60
80
100
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)