Datasheet

IRFB9N65A
6/21/00
www.irf.com 1
SMPS MOSFET
HEXFET
®
Power MOSFET
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
Benefits
Applications
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
V
DSS
R
DS(on)
max I
D
650V 0.93Ω 8.5A
Typical SMPS Topologies
l Single Transistor Flyback
Notes  through  are on page 8
l Single Transistor Forward
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 8.5
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 5.4 A
I
DM
Pulsed Drain Current  21
P
D
@T
C
= 25°C Power Dissipation 167 W
Linear Derating Factor 1.3 W/°C
V
GS
Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt  2.8 V/ns
T
J
Operating Junction and -55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
TO-220AB
PD - 91815C