Datasheet

IRFH5010PbF
2 www.irf.com
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
(Bottom)
Junction-to-Case
––– 0.5
R
θJC
(Top)
Junction-to-Case
––– 15
°C/W
R
θJA
Junction-to-Ambient
––– 35
R
θ
JA
(<10s)
Junction-to-Ambient
––– 22
D
S
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V
ΔΒ
V
DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 7.5 9.0
m
Ω
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
Δ
V
GS(th)
Gate Threshold Voltage Coefficient ––– -8.3 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 20
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 206 ––– ––– S
Q
g
Total Gate Charge ––– 67 101
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 12 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 5.3 –––
Q
gd
Gate-to-Drain Charge ––– 18 –––
Q
godr
Gate Charge Overdrive ––– 32 –––
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 23.3 –––
Q
oss
Output Charge ––– 18 ––– nC
R
G
Gate Resistance ––– 1.2
–––
Ω
t
d(on)
Turn-On Delay Time ––– 9 –––
t
r
Rise Time ––– 12 –––
t
d(off)
Turn-Off Delay Time ––– 27 –––
t
f
Fall Time ––– 8.6 –––
C
iss
Input Capacitance ––– 4340 –––
C
oss
Output Capacitance ––– 425 –––
C
rss
Reverse Transfer Capacitance ––– 162 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 34 51 ns
Q
rr
Reverse Recovery Charge ––– 256 384 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
MOSFET symbol
nA
ns
A
pF
nC
V
DS
= 50V
–––
V
GS
= 20V
V
GS
= -20V
––– ––– 400
––– ––– 100
Conditions
V
GS
= 0V, I
D
= 250uA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 50A
Conditions
Max.
227
50
ƒ = 1.0MHz
T
J
= 25°C, I
F
= 50A, V
DD
= 50V
di/dt = 500A/μs
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
–––
R
G
=1.3
Ω
V
DS
= 25V, I
D
= 50A
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
μA
I
D
= 50A
I
D
= 50A
V
GS
= 0V
V
DS
= 25V
V
DS
= V
GS
, I
D
= 150μA
V
GS
= 10V
Typ.
V
DS
= 100V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V
V
DD
= 50V, V
GS
= 10V