Datasheet

www.irf.com 1
3/15/10
IRFH5206PbF
HEXFET
®
Power MOSFET
Notes  through  are on page 8
PD -97466
Features and Benefits
Features
Benefits
PQFN 5X6 mm
Note
Form Quantit
y
IRFH5206TRPBF PQFN 5mm x 6mm Ta
p
e and Reel 4000
IRFH5206TR2PBF PQFN 5mm x 6mm Ta
p
e and Reel 400
Orderable part number Package Type Standard Pac
k
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• Boost Converters
Low R
DSon
(≤ 7.0mΩ at Vgs=10V) Lower Conduction Losses
Low Thermal Resistance to PCB (≤ 1.2°C/W)
Enable better thermal dissipation
100% Rg tested Increased Reliability
Low Profile (≤ 0.9 mm)
results in Increased Power Density
Industry-Standard Pinout
⇒ Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
MSL1, Industrial Qualification Increased Reliability
Ab
so
l
ute
M
ax
i
mum
R
at
i
ngs
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
P
D
@ T
C(Bottom)
= 25°C
Power Dissipation
Linear Derating Factor (Bottom) W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
-55 to + 150
3.6
0.83
100
Max.
16
56
350
± 20
60
13
89
V
W
A
°C
V
DS
60 V
R
DS(on) max
(@V
GS
= 10V)
6.7
m
Q
g (typical)
40
nC
R
G (typical)
1.7
I
D
(@T
c
(
Bottom
)
= 25°C)
89 A