Datasheet

03/31/2010
IRFH5250DPbF
HEXFET
®
Power MOSFET
Notes  through  are on page 8
Features and Benefits
www.irf.com 1
Applications
• Synchronous MOSFET for high frequency buck converters
Features
Benefits
PQFN 5X6 mm
Note
Form Quantit
y
IRFH5250DTRPBF PQFN 5mm x 6mm Ta
p
e and Reel 4000
IRFH5250DTR2PBF PQFN 5mm x 6mm Tape and Reel 400
Orderable part number Package Type Standard Pac
k
Absolute Maximum Ratin
g
s
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
P
D
@T
C(Bottom)
= 25°C
Power Dissipation
Linear Deratin
g
Factor W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
V
W
A
°C
Max.
40
100
400
± 20
25
32
100
-55 to + 150
3.6
0.029
250
Low RDSon (<1.4mΩ)
Lower Conduction Losses
Schottk
y
Intrinsic Diode with Low Forward Volta
g
e Lower Switchin
g
Losses
Low Thermal Resistance to PCB (<0.5°C/W) Enable better thermal dissipation
100% R
g
tested Increased Reliabilit
y
Low Profile (<0.9 mm) results in Increased Power Density
Industry-Standard Pinout
⇒
Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
MSL1, Industrial Qualification Increased Reliability
V
DS
25 V
R
DS(on) max
(@V
GS
= 10V)
1.4 m
Ω
V
SD max
(@I
S
= 5.0A)
t
rr (typical)
27 ns
I
D
(@T
c(Bottom)
= 25°C)
100 A
0.6 V
PD - 97453A