Datasheet
04/01/2010
IRFH5302DPbF
HEXFET
®
Power MOSFET
Notes through are on page 8
Features and Benefits
www.irf.com 1
Applications
Features
Benefits
PQFN 5X6 mm
Note
Form Quantit
y
IRFH5302DTRPBF PQFN 5mm x 6mm Ta
p
e and Reel 4000
IRFH5302DTR2PBF PQFN 5mm x 6mm Ta
p
e and Reel 400
Orderable part number Package Type Standard Pac
k
Absolute Maximum Ratin
g
s
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
P
D
@T
C(Bottom)
= 25°C
Power Dissipation
Linear Deratin
g
Factor W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
-55 to + 150
3.6
0.83
104
Max.
29
100
400
± 20
30
23
100
V
W
A
°C
V
DS
30 V
R
DS(on) max
(@V
GS
= 10V)
2.5
mΩ
V
SD max
(@I
S
= 5.0A)
t
rr (typical)
19 ns
I
D
(@T
c(Bottom)
= 25°C)
100 A
0.65 V
• Synchronous MOSFET for high frequency buck converters
Low RDSon (<2.5m
Ω
)
Lower Conduction Losses
Schottky Intrinsic Diode with Low Forward Voltage Lower Switching Losses
Low Thermal Resistance to PCB (<1.2°C/W) Increased Power Density
100% Rg tested Increased Reliability
Low Profile (<0.9 mm) results in Increased Power Density
Industry-Standard Pinout
⇒
Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier
MSL1, Industrial Qualification Increased Reliability
PD - 97454A