Datasheet

www.irf.com 1
10/08/09
IRFH5306PbF
HEXFET
®
Power MOSFET
Notes through are on page 8
PD - 97429
Features and Benefits
Applications
• Control MOSFET for buck converters
PQFN 5X6 mm
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
P
D
@ T
C(Bottom)
= 25°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
13
44
-55 to + 150
3.6
0.029
26
V
W
A
°C
Max.
15
28
60
±20
30
Note
Form Quantity
IRFH5306TRPBF PQFN 5mm x 6mm Tape and Reel 4000
IRFH5306TR2PBF PQFN 5mm x 6mm Tape and Reel 400
Orderable part number Package Type Standard Pack
Features Benefits
Low charge (typical 7.8nC) Lower switching losses
Low thermal resistance to PCB (
<
4.9°C/W) Increased power density
100% Rg tested Increased reliability
Low profile (
<
0.9 mm)
results in
Increased power density
Industry-standard pinout
⇒
Multi-vendor compatibility
Compatible with existing Surface Mount Techniques
Easier manufacturing
RoHS compliant containing no lead, no bromide and no halogen
Environmentally friendly
MSL1, Industrial qualification Increased reliability
V
DS
30 V
R
DS(on) max
(@V
GS
= 10V)
8.1 mΩ
Q
g (typical)
7.8 nC
R
G (typical)
1.4 Ω
I
D
(@T
c(Bottom)
= 25°C)
44 A