Datasheet

09/09/10
IRFHM830DPbF
HEXFET
®
Power MOSFET
Notes  through  are on page 8
Features and Benefits
www.irf.com 1
Applications
3.3mm x 3.3mm PQFN
Note
Form Quantit
y
IRFHM830DTRPBF PQFN 3.3mm x 3.3mm Ta
p
e and Reel 4000
IRFHM830DTR2PBF PQFN 3.3mm x 3.3mm Ta
p
e and Reel 400
Orderable part number Package Type Standard Pac
k
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
P
D
@ T
C(Bottom)
= 25°C
Power Dissipation
Linear Derating Factor
W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
-55 to + 150
2.8
0.022
37
Max.
20
40
160
±20
30
16
40
V
W
A
°C
• Synchronous MOSFET for Buck Converters
V
DS
30 V
R
DS(on) max
(@V
GS
= 10V)
4.3
m
Ω
Q
g (typical)
13
nC
R
G (typical)
1.1
Ω
I
D
(@T
c(Bottom)
= 25°C)
40 A
3
2
18
7
6
5
4
D
D
D
D
S
S
S
G
Features Benefits
Low R
DSon
(≤ 4.3mΩ)
Lower Conduction Losses
Schottky intrinsic diode with low forward voltage Lower switching losses
Low Thermal Resistance to PCB (<3.4°C/W) Increased Power Density
100% R
g
tested Increased Reliability
Low Profile (< 1.0mm) results in Increased Power Density
Industry-Standard Pinout
⇒
Multi-Vendor Compatibility
Compatible with Existin
g
Surface Mount Techniques Easier Manufacturin
g
RoHS Compliant Containin
g
no Lead, no Bromide and no Halo
g
en
Environmentally Friendlier
MSL1, Industrial Qualification Increased Reliability
PD -96327A