Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRFHM831TR2PBF, MOSFET

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9/8/10

IRFHM831PbF

HEXFET

Power MOSFET

Notes  through  are on page 8

PD -97539A

PQFN 3.3mm x 3.3mm

Features and Benefits

Applications

Features

Benefits

Note

Form Quantity

IRFHM831TRPBF PQFN 3.3mm x 3.3mm Tape and Reel 4000

IRFHM831TR2PBF PQFN 3.3mm x 3.3mm Tape and Reel 400

Orderable part number Package Type Standard Pack

• Control MOSFET for Buck Converters

30 V

DS(on) max

(@V

= 10V)

7.8

g (typical)

7.3

G (typical)

0.5

(@T

c(Bottom)

= 25°C)

40 A

Absolute Maximum Ratings

Parameter Units

Drain-to-Source Voltage

Gate-to-Source Voltage

@ T

= 25°C Continuous Drain Current, V

@ 10V

@ T

= 70°C Continuous Drain Current, V

@ 10V

@ T

C(Bottom)

= 25°C Continuous Drain Current, V

@ 10V

@ T

C(Bottom)

= 100°C Continuous Drain Current, V

@ 10V

Pulsed Drain Current

= 25°C

Power Dissipation

@ T

C(Bottom)

= 25°C

Power Dissipation

Linear Derating Factor W/°C

Operating Junction and

STG

Storage Temperature Range

-55 to + 150

2.5

0.02

Max.

±20

°C

Low Charge (typical 7.3nC) Lower Switching Losses

Low Thermal Resistance to PCB (<4.7°C/W) Enable Better Thermal Dissipation

100% Rg tested Increased Reliability

Low Profile (<1.0mm) results in Increased Power Density

Industry-Standard Pinout

⇒

Multi-Vendor Compatibility

Compatible with Existing Surface Mount Techniques

Easier Manufacturing

RoHS Compliant Containing no Lead, no Bromide and no Halogen

Environmentally Friendlier

MSL1, Industrial Qualification Increased Reliability

Summary of content (8 pages)

PAGE 1
PD -97539A IRFHM831PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 7.8 m Qg (typical) RG (typical) 7.3 0.5 nC ID 40h A (@VGS = 10V) (@Tc(Bottom) = 25°C) : : D 5 4 G D 6 3 S D 7 2 S D 8 1 S PQFN 3.3mm x 3.3mm Applications • Control MOSFET for Buck Converters Features and Benefits Benefits Features Low Charge (typical 7.3nC) Low Thermal Resistance to PCB (<4.7°C/W) 100% Rg tested Low Profile (<1.
PAGE 2
IRFHM831PbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th) IDSS IGSS gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Output Charge Min. 30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 82 ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.02 6.6 10.7 1.8 -6.8 ––– ––– ––– ––– ––– 16 7.3 1.7 0.9 2.5 2.2 3.4 5.1 Max.
PAGE 3
IRFHM831PbF 1000 ≤ 60μs PULSE WIDTH Tj = 25°C TOP 100 BOTTOM VGS 10V 8.0V 4.5V 3.8V 3.5V 3.3V 3.0V 2.8V ≤ 60μs PULSE WIDTH Tj = 150°C ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 1000 10 TOP 100 BOTTOM VGS 10V 8.0V 4.5V 3.8V 3.5V 3.3V 3.0V 2.8V 10 2.8V 2.8V 1 1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 100 Fig 2. Typical Output Characteristics 2.
PAGE 4
IRFHM831PbF 1000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 100.0 10.0 TJ = 150°C TJ = 25°C 1.0 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 100μsec 10msec 10 1msec 1 Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 0.1 1.0 1 10 100 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 50 3.
PAGE 5
40 EAS, Single Pulse Avalanche Energy (mJ) ( Ω) RDS (on), Drain-to -Source On Resistance m IRFHM831PbF ID = 12A 35 30 25 20 15 TJ = 125°C 10 5 TJ = 25°C 200 I D 3.1A 6.4A BOTTOM 12A TOP 160 120 80 40 0 0 2 4 6 8 10 12 14 16 18 20 25 VGS, Gate-to-Source Voltage (V) 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage V(BR)DSS tp 15V DRIVER L VDS D.U.
PAGE 6
IRFHM831PbF D.U.T Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T.
PAGE 7
IRFHM831PbF PQFN 3.3x3.3 Outline Package Details 8 1 7 2 6 3 5 4 For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 3.3x3.3 Part Marking 3.3x3.
PAGE 8
IRFHM831PbF PQFN 3.3x3.3 Tape and Reel NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. REEL DIMENSIONS STANDARD OPTION (QTY 4000) METRIC IMPERIAL MAX MIN MAX CODE MIN 330.25 12.835 13.002 A 326.0 0.805 0.795 20.45 B 20.2 0.531 0.504 13.50 C 12.8 0.098 0.059 2.5 D 1.5 E 102.0 REF 4.016 REF F 0.720 0.701 18.3 17.8 G 0.508 0.488 12.9 12.4 Qualification Information CODE A B C D E F G H DIMENSIONS METRIC IMPERIAL MIN MAX MIN MAX 7.90 8.10 0.311 0.319 3.90 4.10 0.154 0.161 11.70 12.30 0.