Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRFHM9331TR2PBF, MOSFET

www.irf.com 1

06/30/10

IRFHM9331PbF

HEXFET

Power MOSFET

Notes  through  are on page 2

3mm x 3mm PQFN

Applications

l System/load switch

Features and Benefits

Features Benefits

Low Thermal Resistance to PCB (<6.0°C/W) Enable better thermal dissipation

Compatible with Existin

Surface Mount Techniques results in Easier Manufacturin

RoHS Compliant Containin

no Lead, no Bromide and no Halo

⇒ Environmentally Friendlier

MSL1, Consumer Qualification Increased Reliability

Note

Form Quantit

IRFHM9331TRPBF PQFN 3mm x 3mm Ta

e and Reel 4000

Orderable part number Package Type Standard Pac

-30 V

DS(on) max

(@V

= -10V)

14.6

Ω

g (typical)

32 nC

(@T

= 25°C)

-11 A

Absolute Maximum Ratings

Parameter Units

Drain-to-Source Voltage

Gate-to-Source Voltage

@ T

= 25°C Continuous Drain Current, V

@ -10V

@ T

= 70°C Continuous Drain Current, V

@ -10V

@ T

= 25°C Continuous Drain Current, V

@ -10V

@ T

= 70°C Continuous Drain Current, V

@ -10V

Pulsed Drain Current

= 25°C

Power Dissipation

@ T

= 70°C

Power Dissipation

Linear Derating Factor W/°C

Operating Junction and

STG

Storage Temperature Range

°C

Max.

-11

-24

-90

± 25

-30

-9

-24

-55 to + 150

2.8

0.02

1.8

PD - 96313

Summary of content (8 pages)

PAGE 1
PD - 96313 IRFHM9331PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = -10V) Qg (typical) ID (@TA = 25°C) -30 V 14.6 mΩ 32 nC -11 5D G4 6 D S 3 7D S 2 8D S 1 S S S D D G D D A 3mm x 3mm PQFN Applications l System/load switch Features and Benefits Features Low Thermal Resistance to PCB (<6.
PAGE 2
IRFHM9331PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Drain-to-Source Breakdown Voltage -30 ––– ––– V ∆ΒVDSS/∆TJ RDS(on) Breakdown Voltage Temp. Coefficient ––– ––– 0.02 10.0 ––– ––– V/°C Static Drain-to-Source On-Resistance Conditions Units BVDSS mΩ VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -20V, ID = -11A VGS = -10V, ID = -11A e e ––– 11.7 14.6 VGS(th) Gate Threshold Voltage -1.3 -1.8 -2.
PAGE 3
IRFHM9331PbF 1000 1000 VGS -10V -5.0V -4.5V -3.5V -3.3V -3.1V -2.9V -2.7V 100 BOTTOM ≤60µs PULSE WIDTH -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) TOP 10 -2.7V 1 TOP Tj = 150°C 100 BOTTOM VGS -10V -5.0V -4.5V -3.5V -3.3V -3.1V -2.9V -2.7V 10 -2.7V ≤60µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 1 10 100 0.1 -V DS, Drain-to-Source Voltage (V) 100 1.6 RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 100 T J = 150°C 10 T J = 25°C 1 VDS = -15V ≤60µs PULSE WIDTH 1.
PAGE 4
IRFHM9331PbF 1000 -I D, Drain-to-Source Current (A) -I SD, Reverse Drain Current (A) 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100 T J = 150°C 10 T J = 25°C 100µsec 1msec 10 10msec 1 DC 0.1 T A = 25°C Tj = 150°C Single Pulse VGS = 0V 1.0 0.01 0.4 0.6 0.8 1.0 1.2 0 1 -VSD, Source-to-Drain Voltage (V) 100 -VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 2.
PAGE 5
IRFHM9331PbF RDS(on), Drain-to -Source On Resistance ( mΩ) RDS(on), Drain-to -Source On Resistance (m Ω) 30 ID = -11A 25 20 T J = 125°C 15 10 T J = 25°C 5 0 5 10 15 20 100 80 60 40 Vgs = -4.5V Vgs = -10V 20 0 25 0 20 60 100 Fig 13. Typical On-Resistance vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage 350 1000 ID TOP -1.9A -2.9A BOTTOM -9.0A 300 800 Power (W) 250 200 150 600 400 100 200 50 0 1E-5 0 25 50 75 100 125 150 1E-4 Fig 14. Maximum Avalanche Energy vs.
PAGE 6
IRFHM9331PbF Id Vds Vgs L VCC DUT 0 20K 1K Vgs(th) SS Qgodr Fig 17a. Gate Charge Test Circuit I AS D.U.T RG IAS -V GS -20V tp Qgs2 Qgs1 Fig 17b. Gate Charge Waveform L VDS Qgd VDD A DRIVER 0.01Ω tp V(BR)DSS 15V Fig 18b. Unclamped Inductive Waveforms Fig 18a. Unclamped Inductive Test Circuit VDS RD td(on) VGS RG t d(off) tf VGS D.U.T. - + 10% V DD -VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 19a. Switching Time Test Circuit 6 tr 90% VDS Fig 19b.
PAGE 7
IRFHM9331PbF PQFN Package Details PQFN Part Marking INTERNATIONAL RECTIFIER LOGO 6 DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) XXXX XYWWX XXXXX PART NUMBER MARKING CODE (Per Marking Spec.) PIN 1 IDENTIFIER LOT CODE (Eng Mode - Min. last 4 digits of EATI #) (Prod Mode - 4 digits SPN code) TOP MARKING (LASER) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.
PAGE 8
IRFHM9331PbF PQFN Tape and Reel Qualification information† Qualification level Moisture Sensitivity Level RoHS compliant Cons umer (per JE DE C JE S D47F PQFN 3mm x 3mm †† ††† guidelines ) MS L1 ††† (per IPC/JE DE C J-S T D-020D Yes ) Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher qualification ratings may be available should the user have such requirements.