Datasheet
HEXFET
®
Power MOSFET
Notes through are on page 2
3mm x 3mm PQFN
D
D
D
D
S
G
S
S
Applications
l System/load switch
Features and Benefits
Features
Benefits
Low Thermal Resistance to PCB (<6.0°C/W)
Enable better thermal dissipation
Compatible with Existing Surface Mount Techniques
results in
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
⇒
Environmentally Friendlier
MSL1, Consumer Qualification
Increased Reliability
V
DS
-30 V
R
DS(on) max
(@V
GS
= -10V)
14.6
m
Ω
Q
g (typical)
32 nC
I
D
(@T
A
= 25°C)
-11 A
6
5
7
8
D
D
D
D
1
2
3
4
S
S
G
S
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ -10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ -10V
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
I
D
@ T
C
= 70°C
Continuous Drain Current, V
GS
@ -10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
P
D
@ T
A
= 70°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
V
W
A
°C
Max.
-11
-24
-90
± 25
-30
-9
-24
-55 to + 150
2.8
0.02
1.8
IRFHM9331PbF
1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 16, 2013
Form Quantity
IRFHM9331TRPbF
PQFN 3mm x 3mm
Tape and Reel
4000
IRFHM9331TR2PbF PQFN 3mm x 3mm Tape and Reel 400 EOL notice # 259
Orderable part number Package Type
Standard Pack
Note