Datasheet

HEXFET
®
Power MOSFET
Notes through are on page 2
3mm x 3mm PQFN
D
D
D
D
S
G
S
S
Applications
l System/load switch
Features and Benefits
Features
Benefits
Low Thermal Resistance to PCB (<6.0°C/W)
Enable better thermal dissipation
Compatible with Existing Surface Mount Techniques
results in
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
MSL1, Consumer Qualification
Increased Reliability
V
DS
-30 V
R
DS(on) max
(@V
GS
= -10V)
14.6
m
Ω
Q
g (typical)
32 nC
I
D
(@T
A
= 25°C)
-11 A
6
5
7
8
D
D
D
D
1
2
3
4
S
S
G
S
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ -10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ -10V
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
I
D
@ T
C
= 70°C
Continuous Drain Current, V
GS
@ -10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
P
D
@ T
A
= 70°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
V
W
A
°C
Max.
-11
-24
-90
± 25
-30
-9
-24
-55 to + 150
2.8
0.02
1.8
IRFHM9331PbF
1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 16, 2013
Form Quantity
IRFHM9331TRPbF
PQFN 3mm x 3mm
Tape and Reel
4000
IRFHM9331TR2PbF PQFN 3mm x 3mm Tape and Reel 400 EOL notice # 259
Orderable part number Package Type
Standard Pack
Note

Summary of content (8 pages)