Datasheet

11/23/10
IRFHS8342PbF
HEXFET
®
Power MOSFET
Notes  through  are on page 2
PD - 97596A
Features and Benefits
www.irf.com 1
Applications
• Control MOSFET for Buck Converters
• System/Load Switch
Absolute Maximum Ratin
g
s
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 25°C
Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
P
D
@T
A
= 70°C
Power Dissipation
Linear Derating Factor
W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
V
W
A
°C
Max.
8.8
15
76
±20
30
7.1
19
8.5
-55 to + 150
2.1
0.02
1.3
Note
Form Quantit
y
IRFHS8342TRPBF PQFN 2mm x 2mm Ta
p
e and Reel 4000
IRFHS8342TR2PBF PQFN 2mm x 2mm Ta
p
e and Reel 400
Orderable part number Package Type Standard Pac
k
2mm x 2mm PQFN
Features Resultin
g
Benefits
Low R
DSon
(≤ 16.0mΩ) Lower Conduction Losses
Low Thermal Resistance to PCB (≤ 13°C/W)
Enable better thermal dissipation
Low Profile (≤ 1.0 mm)
results in Increased Power Density
Compatible with Existing Surface Mount Techniques
Easier Manufacturin
g
RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier
MSL1, Consumer Qualification Increased Reliability
G
D
D
S
D
D
S
G
3
S
D2
D1
4S
5D
6D
TOP VIEW
D
D
V
DS
30 V
V
GS max
±
20 V
R
DS(on) max
(@V
GS
= 10V)
16.0
m
Ω
Q
g(typical)
(@V
GS
= 4.5V)
4.2 nC
I
D
(@T
c(Bottom)
= 25°C)
8.5 A