Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRFHS9351TR2PBF, MOSFET

www.irf.com 1

7/27/11

IRFHS9351PbF

HEXFET

Power MOSFET

Notes  through  are on page 2

Applications

l Charge and Discharge Switch for Battery Application

l System/load switch

Features and Benefits

PD - 97572B

Note

Form Quantity

IRFHS9351TRPBF PQFN 2mm x 2mm Tape and Reel 4000

IRFHS9351TR2PBF PQFN 2mm x 2mm Tape and Reel 400

Orderable part number Package Type Standard Pack

Features Benefits

Low R

DSon

(≤ 170mΩ)

Lower Conduction Losses

Low Thermal Resistance to PCB (≤ 19°C/W) Enable better thermal dissipation

Low Profile (≤ 1.0 mm) results in Increased Power Density

Compatible with Existing Surface Mount Techniques

Easier Manufacturing

RoHS Compliant Containing no Lead, no Bromide and no Halogen

Environmentally Friendlier

MSL1, Consumer Qualification Increased Reliability

-30 V

GS max

±20 V

DS(on) max

(@V

= -10V)

170

(@T

= 25°C)

-3.4 A

Absolute Maximum Ratings

Parameter Units

Drain-to-Source Voltage

Gate-to-Source Voltage

@ T

= 25°C Continuous Drain Current, V

@ -10V

@ T

= 70°C Continuous Drain Current, V

@ -10V

@ T

= 25°C Continuous Drain Current, V

@ -10V

@ T

= 70°C Continuous Drain Current, V

@ -10V

@ T

= 25°C Continuous Drain Current, V

@ 10V (Package Limited)

Pulsed Drain Current

= 25°C

Power Dissipation

@ T

= 70°C

Power Dissipation

Linear Derating Factor W/°C

Operating Junction and

STG

Storage Temperature Range

-55 to + 150

1.4

0.01

0.9

Max.

-2.3

-4.1

-20

± 20

-30

-1.5

-5.1

-3.4

°C

G1 2

S1 1

4S2

5G2

6D1

TOP VIEW

FET1

FET2

2mm x 2mm Dual PQFN

Summary of content (8 pages)

PAGE 1
PD - 97572B IRFHS9351PbF HEXFET® Power MOSFET VDS VGS max -30 ±20 V V RDS(on) max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) d A T OP VIEW S1 1 6 D1 S2 D1 G1 2 FET 1 D1 D1 D2 5 G2 D2 D2 3 G2 4 S2 D2 FET 2 G1 S1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application System/load switch Features and Benefits Features Low RDSon (≤ 170mΩ) Low Thermal Resistance to PCB (≤ 19°C/W) Low Profile (≤ 1.
PAGE 2
IRFHS9351PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS VDSS/ TJ RDS(on) V GS(th) VGS(th) IDSS IGSS Min. Typ. Max. Units Drain-to-Source Breakdown Voltage -30 ––– ––– V Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C ––– 135 170 ––– 235 290 Static Drain-to-Source On-Resistance m Gate Threshold Voltage -1.3 -1.8 -2.4 V Gate Threshold Voltage Coefficient ––– -4.6 ––– mV/°C Drain-to-Source Leakage Current ––– ––– -1.
PAGE 3
IRFHS9351PbF 100 100 VGS -10V -8.0V -5.0V -4.5V -3.5V -3.3V -3.0V -2.8V 10 BOTTOM 1 -2.8V 10 BOTTOM 1 -2.8V ≤60μs PULSE WIDTH ≤60μs PULSE WIDTH Tj = 25°C 0.1 0.1 1 Tj = 150°C 0.1 10 0.1 100 10 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 1.
PAGE 4
IRFHS9351PbF 100 -ID, Drain-to-Source Current (A) -ISD, Reverse Drain Current (A) 100 10 TJ = 150°C 1 TJ = 25°C VGS = 0V 0.6 0.8 1.0 1.2 10 1 DC 0.1 10msec Tc = 25°C Tj = 150°C Single Pulse 0.1 1.4 1 10 100 VDS, Drain-to-Source Voltage (V) -VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 6 -V GS(th), Gate threshold Voltage (V) 2.5 5 ID , Drain Current (A) 100μsec 1msec 0.01 0.1 0.
PAGE 5
00 ( Ω) RDS(on), Drain-to -Source On Resistance m RDS(on), Drain-to -Source On Resistance (mΩ) IRFHS9351PbF ID = -3.1A 400 300 TJ = 125°C 200 TJ = 25°C 100 0 5 10 15 20 500 400 300 Vgs = -4.5V 200 Vgs = -10V 100 25 0 2 4 6 8 -ID, Drain Current (A) -VGS, Gate -to -Source Voltage (V) Fig 13. Typical On-Resistance vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage 400 Power (W) 300 200 100 0 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 Time (sec) Fig 14. Typical Power vs. Time D.U.
PAGE 6
IRFHS9351PbF Id Vds Vgs L VCC DUT 0 20K 1K Vgs(th) SS Qgodr Fig 16a. Gate Charge Test Circuit I AS D.U.T RG IAS -V GS -20V tp Qgs2 Qgs1 Fig 16b. Gate Charge Waveform L VDS Qgd VDD A DRIVER 0.01Ω tp V(BR)DSS 15V Fig 17b. Unclamped Inductive Waveforms Fig 17a. Unclamped Inductive Test Circuit VDS RD td(on) VGS RG t d(off) tf VGS D.U.T. 10% + V DD -VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 18a. Switching Time Test Circuit 6 tr 90% VDS Fig 18b.
PAGE 7
IRFHS9351PbF PQFN Package Details PQFN Part Marking 9351 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.
PAGE 8
IRFHS9351PbF PQFN Tape and Reel CORE TAPE Remark: Width Table 2: COVER TAPE (WIDTH) 5.4 mm 9.5 mm - Dimension above are typical dimensions. - Cover tape thickness is 0.048mm +/- 0.005mm. - Surface resistivity 10E5 < Rs <10E9. TOLERANCE +/- 0.1 mm +/- 0.