Datasheet

www.irf.com 1
8/22/06
IRFI4019H-117P
Notes  through  are on page 2
DIGITAL AUDIO MOSFET
TO-220 Full-Pak 5 PIN
Features
 Integrated Half-Bridge Package
 Reduces the Part Count by Half
 Facilitates Better PCB Layout
 Key Parameters Optimized for Class-D
Audio Amplifier Applications
 Low R
DS(ON)
for Improved Efficiency
 Low Qg and Qsw for Better THD and
Improved Efficiency
 Low Qrr for Better THD and Lower EMI
 Can Delivery up to 200W per Channel into
8Ω Load in Half-Bridge Configuration
Amplifier
 Lead-Free Package
Description
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and
internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such
as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable
device for Class D audio amplifier applications.
G1, G2 D1, D2 S1, S2
Gate Drain Source
Absolute Maximum Ratings h
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current c
E
AS
Single Pulse Avalanche Energyd
mJ
P
D
@T
C
= 25°C
Power Dissipation f
W
P
D
@T
C
= 100°C
Power Dissipation f
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance h
Parameter Typ. Max. Units
R
θJC
Junction-to-Case f
––– 6.9
R
θJA
Junction-to-Ambient f
––– 65
77
18
7.2
0.15
10lbxin (1.1Nxm)
-55 to + 150
300
Max.
6.2
34
±20
150
8.7
S2
G2
S1/D2
G1
D1
V
DS
150 V
R
DS(ON)
typ. @ 10V
80
m:
Q
g
typ.
13 nC
Q
sw
typ.
4.1 nC
R
G(int)
typ.
2.5 Ω
T
J
max
150 °C
Key Parameters h
PD - 97074A