Datasheet

www.irf.com 1
08/24/06
DIGITAL AUDIO MOSFET
IRFI4024H-117P
Features
Integrated half-bridge package
Reduces the part count by half
Facilitates better PCB layout
Key parameters optimized for Class-D
audio amplifier applications
Low R
DS(ON)
for improved efficiency
Low Qg and Qsw for better THD and
improved efficiency
Low Qrr for better THD and lower EMI
Can delivery up to 100W per channel into
6 load in full-bridge configuration
amplifier
Lead-free package
Description
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery,
and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors
such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and
reliable device for Class D audio amplifier applications.
V
DS
55 V
R
DS(ON)
typ. @ 10V
48
m
:
Q
g
typ.
8.9 nC
Q
sw
typ.
4.3 nC
R
G(int)
typ.
2.3
T
J
max
150 °C
Key Parameters
g
Absolute Maximum Ratings
g
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C
Power Dissipation W
P
D
@T
C
= 100°C
Power Dissipation
Linear Derating Factor W/°C
E
AS
Single Pulse Avalanche Energy
d
mJ
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
g
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
f
––– 9.21 °C/W
R
θ
JA
Junction-to-Ambient (free air) ––– 65
0.11
14
5.4
Max.
6.9
44
±20
55
11
300 (1.6mm from case)
10 lbf•in (1.1N•m)
-55 to +150
7.4
PD - 97254
G1, G2 D1, D2 S1, S2
Gate Drain Source
TO-220 Full-Pak 5 PIN

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