Datasheet
www.irf.com 1
08/24/06
DIGITAL AUDIO MOSFET
IRFI4024H-117P
Features
Integrated half-bridge package
Reduces the part count by half
Facilitates better PCB layout
Key parameters optimized for Class-D
audio amplifier applications
Low R
DS(ON)
for improved efficiency
Low Qg and Qsw for better THD and
improved efficiency
Low Qrr for better THD and lower EMI
Can delivery up to 100W per channel into
6Ω load in full-bridge configuration
amplifier
Lead-free package
Description
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery,
and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors
such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and
reliable device for Class D audio amplifier applications.
V
DS
55 V
R
DS(ON)
typ. @ 10V
48
m
:
Q
g
typ.
8.9 nC
Q
sw
typ.
4.3 nC
R
G(int)
typ.
2.3 Ω
T
J
max
150 °C
Key Parameters
g
Absolute Maximum Ratings
g
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C
Power Dissipation W
P
D
@T
C
= 100°C
Power Dissipation
Linear Derating Factor W/°C
E
AS
Single Pulse Avalanche Energy
d
mJ
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
g
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
f
––– 9.21 °C/W
R
θ
JA
Junction-to-Ambient (free air) ––– 65
0.11
14
5.4
Max.
6.9
44
±20
55
11
300 (1.6mm from case)
10 lbf•in (1.1N•m)
-55 to +150
7.4
PD - 97254
G1, G2 D1, D2 S1, S2
Gate Drain Source
TO-220 Full-Pak 5 PIN