Datasheet

www.irf.com 1
08/21/06
DIGITAL AUDIO MOSFET
IRFI4212H-117P
Features
 Integrated half-bridge package
 Reduces the part count by half
 Facilitates better PCB layout
 Key parameters optimized for Class-D
audio amplifier applications
 Low R
DS(ON)
for improved efficiency
 Low Qg and Qsw for better THD and
improved efficiency
 Low Qrr for better THD and lower EMI
 Can delivery up to 150W per channel into
4Ω load in half-bridge configuration
amplifier
 Lead-free package
Description
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery,
and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors
such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and
reliable device for Class D audio amplifier applications.
Absolute Maximum Ratings
g
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C
Power Dissipation
f
W
P
D
@T
C
= 100°C
Power Dissipation
f
Linear Derating Factor W/°C
E
AS
Single Pulse Avalanche Energy
d
mJ
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
g
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
f
––– 7.1 °C/W
R
θ
JA
Junction-to-Ambient (free air) ––– 65
18
7.0
0.14
10lb
x
in (1.1N
x
m)
-55 to + 150
300
41
Max.
6.8
44
±20
100
11
V
DS
100 V
R
DS(ON)
typ. @ 10V
58
m
:
Q
g
typ.
12 nC
Q
sw
typ.
6.9 nC
R
G(int)
typ.
3.4 Ω
T
J
max
150 °C
Key Parameters
g
G1, G2 D1, D2 S1, S2
Gate Drain Source
TO-220 Full-Pak 5 PIN
PD - 97249A