Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRFI540NPBF, MOSFET

HEXFET

Power MOSFET

IRFI540NPbF

PD - 94833

11/13/03

DSS

= 100V

DS(on)

= 0.052Ω

= 20A

TO-220 FULLPAK

l Advanced Process Technology

l Isolated Package

l High Voltage Isolation = 2.5KVRMS 

l Sink to Lead Creepage Dist. = 4.8mm

l Fully Avalanche Rated

l Lead-Free

Parameter Min. Typ. Max. Units

θJC

Junction-to-Case   2.8

θJA

Junction-to-Ambient   65

Thermal Resistance

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 20

@ T

= 100°C Continuous Drain Current, V

@ 10V 14 A

Pulsed Drain Current  110

= 25°C Power Dissipation 54 W

Linear Derating Factor 0.36 W/°C

Gate-to-Source Voltage ±20 V

Single Pulse Avalanche Energy  300 mJ

Avalanche Current 16 A

Repetitive Avalanche Current 5.4 mJ

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range °C

Soldering Temperature, for 10 seconds 300 (1.6mm from case)

Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm)

Absolute Maximum Ratings

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowest possible on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional

insulating hardware in commercial-industrial applications.

The moulding compound used provides a high isolation

capability and a low thermal resistance between the tab

and external heatsink. This isolation is equivalent to using

a 100 micron mica barrier with standard TO-220 product.

The Fullpak is mounted to a heatsink using a single clip or

by a single screw fixing.

°C/W

Summary of content (9 pages)

PAGE 1
PD - 94833 IRFI540NPbF HEXFET® Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS(on) = 0.052Ω G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
PAGE 2
IRFI540NPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) g fs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min.
PAGE 3
IRFI540NPbF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D 100 10 4.5V 20µs PULSE WIDTH TC = 25°C 1 0.1 1 10 A 100 100 0.1 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 100 TJ = 25°C TJ = 175°C 10 V DS = 50V 20µs PULSE WIDTH 7 8 9 10 100 A Fig 2. Typical Output Characteristics 3.
PAGE 4
IRFI540NPbF 2400 V GS , Gate-to-Source Voltage (V) 2000 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd Ciss C oss = C ds + C gd I D = 16A V DS = 80V V DS = 50V V DS = 20V 16 1600 12 Coss 1200 800 Crss 400 0 1 10 100 A 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 20 40 60 80 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs.
PAGE 5
IRFI540NPbF V GS ID , Drain Current (A) RD VDS 20 RG 15 D.U.T. + -V DD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 10 Fig 10a. Switching Time Test Circuit 5 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.01 0.00001 0.02 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1.
PAGE 6
IRFI540NPbF D.U.T. RG + - VDD IAS 10 V tp 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD EAS , Single Pulse Avalanche Energy (mJ) L VDS 700 TOP 600 BOTTOM ID 6.6A 11A 16A 500 400 300 200 100 0 VDD = 25V 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) VDS Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS D.U.T.
PAGE 7
IRFI540NPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + RG • • • • Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRFI540NPbF TO-220 Full-Pak Package Outline TO-220 Full-Pak Part Marking Information E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT COD E 3432 AS S E MB L E D ON WW 24 1999 IN T H E AS S E MB L Y L IN E "K " Note: "P" in assembly line position indicates "Lead-Free" IN T E R N AT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT COD E P AR T N U MB E R IR F I840G 924K 34 32 DAT E CODE YE AR 9 = 1999 WE E K 24 L IN E K Data and specifications subject to change without notice.
PAGE 9
Note: For the most current drawings please refer to the IR website at: http://www.irf.