Datasheet

6/15/99
www.irf.com 1
IRFIB7N50A
SMPS MOSFET
HEXFET
®
Power MOSFET
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High speed power switching
l High Voltage Isolation = 2.5KVRMS
Benefits
Applications
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss specified ( See AN 1001)
V
DSS
Rds(on) max I
D
500V 0.52Ω 6.6A
Applicable Off Line SMPS Topologies:
l Two Transistor Forward
Notes  through are on page 8
SDG
l Half & Full Bridge Convertors
TO-220 FULLPAK
l Power Factor Correction Boost
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 6.6
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 4.2 A
I
DM
Pulsed Drain Current  44
P
D
@T
C
= 25°C Power Dissipation 60 W
Linear Derating Factor 0.48 W/°C
V
GS
Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt  6.9 V/ns
T
J
Operating Junction and -55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
PD - 91810