Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRFIZ44NPBF, MOSFET N channel 31A 55V

IRFIZ44N

HEXFET

Power MOSFET

PD - 9.1403A

DSS

= 55V

DS(on)

= 0.024Ω

= 31A

l Advanced Process Technology

l Isolated Package

l High Voltage Isolation = 2.5KVRMS 

l Sink to Lead Creepage Dist. = 4.8mm

l Fully Avalanche Rated

TO-220 FULLPAK

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 3.3

θJA

Junction-to-Ambient ––– 65

Thermal Resistance

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional

insulating hardware in commercial-industrial applications.

The moulding compound used provides a high isolation

capability and a low thermal resistance between the tab

and external heatsink. This isolation is equivalent to using

a 100 micron mica barrier with standard TO-220 product.

The Fullpak is mounted to a heatsink using a single clip or

by a single screw fixing.

8/25/97

Description

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 31

@ T

= 100°C Continuous Drain Current, V

@ 10V 22 A

Pulsed Drain Current  160

= 25°C Power Dissipation 45 W

Linear Derating Factor 0.3 W/°C

Gate-to-Source Voltage ± 20 V

Single Pulse Avalanche Energy 210 mJ

Avalanche Current 25 A

Repetitive Avalanche Energy 4.5 mJ

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Absolute Maximum Ratings

°C/W

Summary of content (8 pages)

PAGE 1
PD - 9.1403A IRFIZ44N HEXFET® Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRFIZ44N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Q gs Q gd t d(on) tr t d(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min.
PAGE 3
IRFIZ44N 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V TOP I , D ra in -to -S o u rc e C u rre n t (A ) D 100 4.5 V 10 2 0µ s PU LSE W ID TH TTCJ = 2 5°C 1 0.1 1 10 100 4 .5V 10 20 µs PU L SE W ID TH T CT=J 175 °C 1 A 0.1 100 Fig 1. Typical Output Characteristics 2.
PAGE 4
IRFIZ44N C , C a p a c ita n c e (p F ) 2000 V GS C is s C rs s C os s C iss = = = = 20 0V , f = 1MH z C gs + C g d , Cds SH OR TED Cgd C ds + C gd V G S , G a te -to -S o u rce V o lta g e (V ) 2500 I D = 2 5A V DS = 4 4V V DS = 2 8V 16 1500 12 C os s 1000 C rss 500 0 10 4 FO R TES T C IR CU IT SEE FIG U R E 13 0 A 1 8 100 0 10 V D S , Drain-to-Source V oltage (V) 30 40 50 60 A 70 Q G , Total Gate Charge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6.
PAGE 5
IRFIZ44N RD VDS 35 VGS 30 D.U.T. RG + I D , Drain Current (A) - VDD 25 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit 15 VDS 10 90% 5 0 25 50 75 100 125 T C , Case Temperature 150 175 ( ° C) 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms (Z thJC ) 10 D = 0.50 1 Thermal Response 0.20 0.10 0.05 PDM 0.1 0.01 0.00001 0.02 0.
PAGE 6
IRFIZ44N L VDS D.U.T. RG + V - DD IAS 10 V tp 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD E A S , S in g le P u ls e A va la n c h e E n e rg y (m J) 500 TO P B OTTO M 400 ID 10 A 1 8A 25 A 300 200 100 VD D = 2 5V 0 25 50 A 75 100 125 150 175 VDS Starting T J , Junction Temperature (°C) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF QG .3µF 10 V QGS D.U.T.
PAGE 7
IRFIZ44N Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • • • • RG Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRFIZ44N Package Outline TO-220 Fullpak Outline Dimensions are shown in millimeters (inches) 10.60 (.417 ) 10.40 (.409 ) ø 3 .40 (.1 33) 3 .10 (.1 23) 4.80 (.189 ) 4.60 (.181 ) -A3.7 0 (.145) 3.2 0 (.126) 16 .0 0 (.630) 15 .8 0 (.622) 2.80 (.110) 2.60 (.102) L EA D AS SIGN M EN T S 1 - GA T E 2 - D R AIN 3 - SO U R C E 7.10 (.280 ) 6.70 (.263 ) 1.15 (.045) M IN . NO T ES : 1 D IM E N SION IN G & T O LER AN C IN G PE R A N SI Y1 4.5M , 1982 1 2 3 2 C O N T R OLL IN G D IM EN SION : IN C H . 3.