Datasheet
IRFIZ48N
PRELIMINARY
HEXFET
®
Power MOSFET
PD 9.1407
S
D
G
V
DSS
= 55V
R
DS(on)
= 0.016Ω
I
D
= 36A
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
TO-220 FULLPAK
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 3.6
R
θJA
Junction-to-Ambient ––– 65
Thermal Resistance
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Description
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 36
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 25 A
I
DM
Pulsed Drain Current 210
P
D
@T
C
= 25°C Power Dissipation 42 W
Linear Derating Factor 0.28 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 270 mJ
I
AR
Avalanche Current 32 A
E
AR
Repetitive Avalanche Energy 4.2 mJ
dv/dt Peak Diode Recovery dv/dt 5.6 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
°C/W