Datasheet

IRFL024ZPbF
HEXFET
®
Power MOSFET
V
DSS
= 55V
R
DS(on)
= 57.5mΩ
I
D
= 5.1A
09/16/10
www.irf.com 1
SOT-223
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 150°C junction operating temperature,
fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in a wide variety of applications.
S
D
G
Description
l Advanced Process Technology
l Ultra Low On-Resistance
l 150°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Features
Absolute Maximum Ratings
Parameter Units
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
P
D
@T
A
= 25°C
Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage V
E
AS (Thermally limited)
Single Pulse Avalanche Energy mJ
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current A
E
AR
Repetitive Avalanche Energy mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Thermal Resistance
Parameter T
y
p. Max. Units
R
θ
JA
Junction-to-Ambient (PCB mount, steady state) ––– 45
°C/W
R
θ
JA
Junction-to-Ambient (PCB mount, steady state) ––– 120
-55 to + 150
1.0
0.02
± 20
Max.
5.1
4.1
41
2.8
32
13
See Fig.12a, 12b, 15, 16
PD - 95312A