Datasheet

IRFP048N
HEXFET
®
Power MOSFET
PD - 9.1409A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
S
D
G
V
DSS
= 55V
R
DS(on)
= 0.016
I
D
= 64A
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
TO-247AC
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 64
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 45 A
I
DM
Pulsed Drain Current  210
P
D
@T
C
= 25°C Power Dissipation 140 W
Linear Derating Factor 0.90 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 270 mJ
I
AR
Avalanche Current 32 A
E
AR
Repetitive Avalanche Energy 14 mJ
dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 1.1
R
θCS
Case-to-Sink, Flat, Greased Surface 0.24 –– °C/W
R
θJA
Junction-to-Ambient ––– 40
Thermal Resistance
8/25/97

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