Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRFP150NPBF, MOSFET N channel 39A voltage:100V

IRFP150N

HEXFET

Power MOSFET

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The TO-247 package is preferred for commercial-

industrial applications where higher power levels

preclude the use of TO-220 devices. The TO-247 is

similar but superior to the earlier TO-218 package

because of its isolated mounting hole.

DSS

= 100V

DS(on)

= 0.036W

= 42A

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

Description

TO-247AC

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 42

@ T

= 100°C Continuous Drain Current, V

@ 10V 30 A

Pulsed Drain Current  140

= 25°C Power Dissipation 160 W

Linear Derating Factor 1.1 W/°C

Gate-to-Source Voltage ± 20 V

Single Pulse Avalanche Energy 420 mJ

Avalanche Current 22 A

Repetitive Avalanche Energy 16 mJ

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter Typ. Max. Units

θJC

Junction-to-Case–––0.95

θCS

Case-to-Sink, Flat, Greased Surface0.24–––°C/W

θJA

Junction-to-Ambient–––40

Thermal Resistance

PD - 91503D

Ω

07/15/02

www.irf.com 1

Summary of content (8 pages)

PAGE 1
PD - 91503D IRFP150N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V Ω RDS(on) = 0.036W G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRFP150N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 100 ––– ––– 2.
PAGE 3
IRFP150N 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 100 10 4.5V 20us PULSE WIDTH TJ = 25 oC 1 0.1 1 10 100 R DS(on) , Drain-to-Source On Resistance (Normalized) TJ = 25 o C TJ = 175 o C 10 6.0 7.0 8.0 9.0 10.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 3.0 5.
PAGE 4
IRFP150N VGS = Ciss = Crss = Coss = C, Capacitance (pF) 3000 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 2500 Ciss 2000 1500 Coss 1000 Crss 500 20 VGS , Gate-to-Source Voltage (V) 3500 0 1 10 ID = 22A VDS = 80V VDS = 50V VDS = 20V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 VDS , Drain-to-Source Voltage (V) 60 80 100 120 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) 40 QG , Total Gate Charge (nC) Fig 5.
PAGE 5
IRFP150N 50 RD VDS VGS I D , Drain Current (A) 40 D.U.T. RG + -VDD 30 10V Pulse Width £1 µs Duty Factor £ 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.1 P DM 0.10 t1 0.05 0.02 0.01 0.01 0.00001 t2 SINGLE PULSE (THERMAL RESPONSE) 0.
PAGE 6
IRFP150N 15V L VDS D R IVE R D .U .T RG + V - DD IA S 20V 0 .01 Ω tp Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) 1000 ID 9.0A 16A BOTTOM 22A TOP 800 600 400 200 0 25 V (B R )D S S 50 75 100 125 150 175 o( C) Starting TJTj, , Junction Temperature(°C) Starting Junction Temperature tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .
PAGE 7
IRFP150N Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations · Low Stray Inductance · Ground Plane · Low Leakage Inductance Current Transformer + - - + RG · · · · Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test D= Period - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRFP150N Package Outline TO-247AC Outline Dimensions are shown in millimeters (inches) -D - 3.65 (.143) 3.55 (.140) 15.90 (.626) 15.30 (.602) -B- 0.25 (.010) M D B M -A5.50 (.217) 20.30 (.800) 19.70 (.775) 2X 1 2 NOTES: 5.50 (.217) 4.50 (.177) 1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 2 C O N TR O LLIN G D IM E N S IO N : IN C H . 3 C O N F O R M S TO JE D E C O U TLIN E T O -247-A C . 3 -C - 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2X 5.45 (.