Datasheet

IRFP260NPbF
HEXFET
®
Power MOSFET
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 50
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 35 A
I
DM
Pulsed Drain Current  200
P
D
@T
C
= 25°C Power Dissipation 300 W
Linear Derating Factor 2.0 W/°C
V
GS
Gate-to-Source Voltage ±20 V
E
AS
Single Pulse Avalanche Energy 560 mJ
I
AR
Avalanche Current 50 A
E
AR
Repetitive Avalanche Energy 30 mJ
dv/dt Peak Diode Recovery dv/dt  10 V/ns
T
J
Operating Junction and -55 to +175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.50
R
θCS
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
R
θJA
Junction-to-Ambient ––– 40
Thermal Resistance
www.irf.com 1
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of
applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of TO-220
devices. The TO-247 is similar but superior to the earlier TO-218
package because of its isolated mounting hole.
Description
V
DSS
= 200V
R
DS(on)
= 0.04Ω
I
D
= 50A
S
D
G
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
TO-247AC
l Lead-Free
08/18/10
PD - 95010A