Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRFP2907PBF, MOSFET

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 209

@ T

= 100°C Continuous Drain Current, V

@ 10V 148 A

Pulsed Drain Current  840

= 25°C Power Dissipation 470 W

Linear Derating Factor 3.1 W/°C

Gate-to-Source Voltage ± 20 V

Single Pulse Avalanche Energy 1970 mJ

Avalanche Current See Fig.12a, 12b, 15, 16 A

Repetitive Avalanche Energy mJ

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)

IRFP2907PbF

HEXFET

Power MOSFET

This Stripe Planar design of HEXFET

Power MOSFETs

utilizes the lastest processing techniques to achieve

extremely low on-resistance per silicon area. Additional

features of this HEXFET power MOSFET are a 175°C

junction operating temperature, fast switching speed

and improved repetitive avalanche rating. These benefits

combine to make this design an extremely efficient and

reliable device for use in a wide variety of applications.

Absolute Maximum Ratings

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 0.32

θCS

Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W

θJA

Junction-to-Ambient ––– 40

Thermal Resistance

DSS

= 75V

DS(on)

= 4.5mΩ

= 209A

Description

08/08/11

www.irf.com 1

TO-247AC

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

Benefits

Typical Applications

Telecom applications requiring soft start

PD -95050C

Summary of content (9 pages)

PAGE 1
PD -95050C IRFP2907PbF HEXFET® Power MOSFET Typical Applications D l Telecom applications requiring soft start Benefits l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 75V RDS(on) = 4.
PAGE 2
IRFP2907PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min.
PAGE 3
IRFP2907PbF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 100 10 4.5V 20μs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 4.5V 10 0.1 100 Fig 1. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 3.0 TJ = 175 ° C 100 TJ = 25 ° C 10 V DS = 25V 20μs PULSE WIDTH 6.0 7.0 8.0 9.
PAGE 4
IRFP2907PbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C, Capacitance(pF) 16000 Coss = Cds + Cgd Ciss 12000 8000 4000 Coss 20 VGS , Gate-to-Source Voltage (V) 20000 1 16 12 8 4 10 0 100 VDS, Drain-to-Source Voltage (V) 100 200 300 400 500 600 700 ID, Drain-to-Source Current (A) 10000 TJ = 175 ° C 10 TJ = 25 ° C 1 0.1 0.0 0 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 100 FOR TEST CIRCUIT SEE FIGURE 13 QG , Total Gate Charge (nC) Fig 5.
PAGE 5
IRFP2907PbF 240 200 ID , Drain Current (A) RD VDS LIMITED BY PACKAGE VGS D.U.T. RG + -VDD 160 10V 120 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 80 Fig 10a. Switching Time Test Circuit 40 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 175 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.
PAGE 6
IRFP2907PbF D.U.T RG + - VDD IAS 20V 0.01Ω tp ID 51A 88A BOTTOM 125A TOP 4000 DRIVER L VDS EAS , Single Pulse Avalanche Energy (mJ) 5000 15V 3000 A 2000 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS 1000 tp 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD VG 4.0 Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T.
PAGE 7
IRFP2907PbF 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming Δ Tj = 25°C due to avalanche losses 0.01 100 0.05 0.10 10 1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 2000 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 125A 1600 1200 800 400 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 16.
PAGE 8
IRFP2907PbF Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + RG • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 9
IRFP2907PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WITH AS SEMBLY LOT CODE 5657 AS S EMBLED ON WW 35, 2001 IN THE AS SEMBLY LINE "H" Note: "P" in as s embly line pos ition indicates "Lead-Free" INTERNAT IONAL RECT IFIER LOGO PART NUMBER IRFPE30 56 135H 57 AS S EMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Notes: 1.