Datasheet

7/16/04
www.irf.com 1
IRFP3703PbF
SMPS MOSFET
HEXFET
®
Power MOSFET
l Synchronous Rectification
Benefits
Applications
l Low Gate Impedance to Reduce Switching
Losses
l Fully Avalanche Rated
V
DSS
R
DS(on)
max I
D
30V 0.0028Ω 210A

Typical SMPS Topologies
l Forward and Bridge Converters with Synchronous Rectification for Telecom and
Industrial Applications
l Offline High Power AC/DC Convertors using Synchronous Rectification
Absolute Maximum Ratings
Notes  through  are on page 8
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 210 
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 100  A
I
DM
Pulsed Drain Current  1000
P
D
@T
C
= 25°C Power Dissipation 230 W
P
D
@T
A
= 25°C Power Dissipation 3.8
Linear Derating Factor 1.5 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 175 °C
TO-247AC
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.65
R
θCS
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
R
θJA
Junction-to-Ambient ––– 40
Thermal Resistance
l Ultra Low On-Resistance
l Active ORing
PD - 95481
l Lead-Free