Datasheet
6/23/06
PD - 97106
www.irf.com 1
HEXFET
®
Power MOSFET
IRFP4321PbF
Benefits
l Low R
DSON
Reduces Losses
l Low Gate Charge Improves the Switching
Performance
l Improved Diode Recovery Improves Switching &
EMI Performance
l 30V Gate Voltage Rating Improves Robustness
l Fully Characterized Avalanche SOA
Applications
l Motion Control Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l Hard Switched and High Frequency Circuits
S
D
G
GDS
Gate Drain Source
TO-247AC
S
D
G
D
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current d
P
D
@T
C
= 25°C
Maximum Power Dissipation W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage V
E
AS (Thermally limited)
Single Pulse Avalanche Energy e
mJ
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case g
––– 0.49
R
θCS
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
R
θJA
Junction-to-Ambient g
––– 40
310
Max.
78 c
55
330
-55 to + 175
2.0
10lbxin (1.1Nxm)
300
±30
210
V
DSS
150V
R
DS(on)
typ.
12m
:
max.
15.5m
:
I
D
78A