Datasheet

www.irf.com 1
12/15/09
IRFP4332PbF
Notes  through  are on page 9
Description
This HEXFET
®
Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low E
PULSE
rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low E
PULSE
Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low Q
G
for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l175°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness
and Reliability
PDP SWITCH
GDS
Gate Drain Source
S
D
G
TO-247AC
S
D
G
D
V
DS
min
250 V
V
DS (Avalanche)
typ.
300 V
R
DS(ON)
typ. @ 10V
29
m
T
J
max
175 °C
Key Parameters
Absolute Maximum Ratings
Parameter Units
V
GS
Gate-to-Source Voltage V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
I
RP
@ T
C
= 100°C
Repetitive Peak Current
P
D
@T
C
= 25°C
Power Dissipation W
P
D
@T
C
= 100°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw N
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
––– 0.42
R
θ
CS
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
R
θJA
Junction-to-Ambient
––– 40
Max.
40
230
57
±30
120
300
-40 to + 175
10lb
in (1.1N m)
360
180
2.4
PD - 97100B