Datasheet

Notes  through o are on page 8
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7/30/04
IRFP90N20DPbF
SMPS MOSFET
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max I
D
200V 0.023Ω 94A
o
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 94o
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 66 A
I
DM
Pulsed Drain Current  380
P
D
@T
C
= 25°C Power Dissipation 580 W
Linear Derating Factor 3.8 W/°C
V
GS
Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt  6.7 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
l High frequency DC-DC converters
l Lead-Free
Benefits
Applications
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-247AC
PD - 95664
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.26
R
θCS
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
R
θJA
Junction-to-Ambient ––– 40