Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRFR1205, MOSFET N channel 37A 55V

IRFR/U1205

HEXFET

Power MOSFET

DSS

= 55V

DS(on)

= 0.027Ω

= 44A

Description

5/11/98

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 44

@ T

= 100°C Continuous Drain Current, V

@ 10V 31 A

Pulsed Drain Current  160

= 25°C Power Dissipation 107 W

Linear Derating Factor 0.71 W/°C

Gate-to-Source Voltage ± 20 V

Single Pulse Avalanche Energy 210 mJ

Avalanche Current 25 A

Repetitive Avalanche Energy 11 mJ

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Absolute Maximum Ratings

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 1.4

θJA

Junction-to-Ambient (PCB mount) ** ––– 50 °C/W

θJA

Junction-to-Ambient ––– 110

Thermal Resistance

D-PAK

TO-252AA

I-PAK

TO-251AA

l Ultra Low On-Resistance

l Surface Mount (IRFR1205)

l Straight Lead (IRFU1205)

l Fast Switching

l Fully Avalanche Rated

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowest possible on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide

variety of applications.

The D-PAK is designed for surface mounting using

vapor phase, infrared, or wave soldering techniques.

The straight lead version (IRFU series) is for through-

hole mounting applications. Power dissipation levels

up to 1.5 watts are possible in typical surface mount

applications.

PD - 91318B

www.irf.com 1

Summary of content (10 pages)

PAGE 1
PD - 91318B IRFR/U1205 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount (IRFR1205) Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.027Ω G Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
PAGE 2
IRFR/U1205 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
PAGE 3
IRFR/U1205 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I , Drain-to-S ource C urrent (A ) D I , D rain-to-Source Current (A ) D TOP 100 4.5V 10 20 µ s P U LS E W ID TH TC = 2 5°C 1 0.1 1 10 A 100 4 .5 V 10 2 0µ s P U L S E W ID TH T C = 17 5°C 1 100 0.1 1 V D S , D rain-to-S ourc e V oltage (V ) Fig 2. Typical Output Characteristics 2.
PAGE 4
IRFR/U1205 C , Capacitance (pF) 2000 C iss V GS C is s C rs s C o ss = = = = 20 0V , f = 1M H z C g s + C g d , Cd s S H O R T E D C gd C d s + C gd V G S , G ate-to-S ource V oltage (V ) 2500 I D = 25 A V D S = 44 V V D S = 28 V 16 1500 12 C oss 1000 C rss 500 0 10 4 FO R TE S T C IR C U IT S E E FIG U R E 1 3 0 A 1 8 100 0 V D S , D rain-to-S ourc e V oltage (V ) 20 30 40 50 60 A 70 Q G , T otal G ate C harge (nC ) Fig 5. Typical Capacitance Vs.
PAGE 5
IRFR/U1205 50 VDS LIMITED BY PACKAGE VGS 40 RD D.U.T. I D , Drain Current (A) RG + -VDD 30 5.0V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 P DM 0.05 0.02 0.
PAGE 6
IRFR/U1205 1 5V L VD S D .U .T RG IA S 10V tp D R IV E R + V - DD A 0.0 1 Ω Fig 12a. Unclamped Inductive Test Circuit E A S , S ingle P ulse A valanche E nergy (m J) 500 TO P B O TTO M 400 ID 10 A 1 8A 25 A 300 200 100 0 V D D = 25 V 25 V (B R )D SS 50 A 75 100 125 150 175 S tarting T J , J unc tion T em perature (°C ) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .
PAGE 7
IRFR/U1205 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • • • • RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive D= Period P.W. + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRFR/U1205 Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 6 .7 3 (.2 6 5 ) 6 .3 5 (.2 5 0 ) 1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) -A 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 ) 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 4 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 ) 1 .0 2 (.0 4 0 ) 1 .6 4 (.0 2 5 ) 1 2 1 0 .4 2 (.4 1 0 ) 9 .4 0 (.3 7 0 ) 3 0 .5 1 (.0 2 0 ) M IN . -B 1 .5 2 (.0 6 0 ) 1 .1 5 (.
PAGE 9
IRFR/U1205 Package Outline TO-251AA Outline Dimensions are shown in millimeters (inches) 6 .7 3 (.2 6 5 ) 6 .3 5 (.2 5 0 ) -A - 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 ) 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - SOURCE 4 - D R A IN 4 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 ) 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 1 2 3 -B 2 .2 8 (.0 9 0 ) 1 .9 1 (.0 7 5 ) 3X 1 .1 4 (.
PAGE 10
IRFR/U1205 Tape & Reel Information TO-252AA TR TRR 1 6.3 ( .641 ) 1 5.7 ( .619 ) 12 .1 ( .4 76 ) 11 .9 ( .4 69 ) F E E D D IR E C T IO N TR L 16.3 ( .64 1 ) 15.7 ( .61 9 ) 8 .1 ( .3 18 ) 7 .9 ( .3 12 ) F E E D D IR E C T IO N NO T ES : 1. C O N T R O LL IN G D IM E N S IO N : M ILLIM E T E R . 2. A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ). 3. O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1. 13 IN C H 16 m m NOTES : 1.