Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRFR13N20D, MOSFET N channel 14A 200V

www.irf.com 1

2/14/00

IRFR13N20D

IRFU13N20D

SMPS MOSFET

HEXFET

Power MOSFET

l High frequency DC-DC converters

Benefits

Applications

l Low Gate to Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C

OSS

to Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

DSS

DS(on)

max I

200V 0.235Ω 13A

Typical SMPS Topologies

l Telecom 48V input Forward Converters

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 13

@ T

= 100°C Continuous Drain Current, V

@ 10V 9.2 A

Pulsed Drain Current  52

= 25°C Power Dissipation 110 W

Linear Derating Factor 0.71 W/°C

Gate-to-Source Voltage ± 30 V

dv/dt Peak Diode Recovery dv/dt  2.2 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Absolute Maximum Ratings

PD- 93814A

Notes  through  are on page 10

D-Pak

IRFR13N20D

I-Pak

IRFU13N20D

Summary of content (10 pages)

PAGE 1
PD- 93814A IRFR13N20D IRFU13N20D SMPS MOSFET HEXFET® Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS 200V RDS(on) max ID 0.
PAGE 2
IRFR13N20D/IRFU13N20D Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 200 ––– ––– V VGS = 0V, I D = 250µA ––– 0.25 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.235 Ω VGS = 10V, I D = 8.
PAGE 3
IRFR13N20D/IRFU13N20D 100 100 VGS 15V 10V 9.0V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V VGS 15V 10V 9.0V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 1 6.0V 20µs PULSE WIDTH TJ = 25 °C 0.1 0.1 1 10 10 100 Fig 1. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 3.
PAGE 4
IRFR13N20D/IRFU13N20D VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 1000 Ciss Coss 100 Crss ID = 7.8A VDS = 160V VDS = 100V VDS = 40V 16 12 8 4 10 FOR TEST CIRCUIT SEE FIGURE 13 0 1 10 100 0 1000 10 20 30 40 Q G , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs.
PAGE 5
IRFR13N20D/IRFU13N20D 14 VDS VGS 12 RD D.U.T. I D , Drain Current (A) RG + -VDD 10 VGS 8 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 6 Fig 10a. Switching Time Test Circuit 4 VDS 2 90% 0 25 50 75 100 125 TC , Case Temperature 150 175 ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 P DM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1.
PAGE 6
IRFR13N20D/IRFU13N20D 240 D R IV E R L VDS D .U .T RG + V - DD IA S 20V 0 .0 1 Ω tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp A EAS , Single Pulse Avalanche Energy (mJ) 1 5V TOP 200 BOTTOM ID 3.2A 5.5A 7.8A 160 120 80 40 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) IAS Fig 12b. Unclamped Inductive Waveforms Fig 12c. Maximum Avalanche Energy Vs. Drain Current QG VGS QGS QGD VG Charge Fig 13a.
PAGE 7
IRFR13N20D/IRFU13N20D Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • • • • RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. D= Period + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRFR13N20D/IRFU13N20D D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 6 .7 3 (.2 6 5 ) 6 .3 5 (.2 5 0 ) -A 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 ) 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 4 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 ) 1.0 2 (.0 4 0 ) 1.6 4 (.0 2 5 ) 1 0 .4 2 (.4 1 0 ) 9 .4 0 (.3 7 0 ) 1 2 1 - GATE 0 .5 1 (.0 2 0 ) M IN . -B 1 .5 2 (.
PAGE 9
IRFR13N20D/IRFU13N20D I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) 6 .7 3 (.26 5 ) 6 .3 5 (.25 0 ) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) -A 1 .2 7 ( .0 5 0 ) 0 .8 8 ( .0 3 5 ) 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 4 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 ( .2 4 5 ) 5 .9 7 ( .2 3 5 ) 1 .5 2 (.0 6 0 ) 1 .1 5 (.
PAGE 10
IRFR13N20D/IRFU13N20D D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .47 6 ) 11.9 ( .46 9 ) F E E D D IR E C T IO N TRL 16 .3 ( .641 ) 15 .7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FE E D D IR E C T IO N N O T ES : 1 . C O N T R O LLIN G D IME N S IO N : M ILL IM ET E R . 2 . A LL D IM EN S IO N S A R E SH O W N IN M ILLIM ET E R S ( IN C H E S ). 3 . O U TL IN E C O N FO R MS T O E IA -481 & E IA -54 1.