Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRFR1N60A, MOSFET N channel 1.4A 600V

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 1.4

@ T

= 100°C Continuous Drain Current, V

@ 10V 0.89 A

Pulsed Drain Current  5.6

= 25°C Power Dissipation 36 W

Linear Derating Factor 0.28 W/°C

Gate-to-Source Voltage ± 30 V

dv/dt Peak Diode Recovery dv/dt  3.8 V/ns

Operating Junction and -55 to + 150

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

SMPS MOSFET

HEXFET

Power MOSFET

Absolute Maximum Ratings

l Switch Mode Power Supply (SMPS)

l Uninterruptable Power Supply

l Power Factor Correction

Benefits

Applications

l Low Gate Charge Qg results in Simple

Drive Requirement

l Improved Gate, Avalanche and dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche Voltage and Current

DSS

Rds(on) max I

600V 7.0Ω 1.4A

Notes  through  are on page 9

www.irf.com 1

3/7/03

Applicable Off Line SMPS Topologies:

l Low Power Single Transistor Flyback

D-Pak

IRFR1N60A

I-Pak

IRFU1N60A

IRFR1N60A

IRFU1N60A

PD - 91846B

Summary of content (10 pages)

PAGE 1
PD - 91846B SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l Power Factor Correction Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current IRFR1N60A IRFU1N60A HEXFET® Power MOSFET VDSS Rds(on) max ID 600V 7.0Ω 1.
PAGE 2
IRFR/U1N60A Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 600 ––– 2.0 ––– ––– ––– ––– Typ. ––– ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA 7.0 Ω VGS = 10V, ID = 0.84A 4.
PAGE 3
IRFR/U1N60A 10 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 1 0.1 4.5V 20µs PULSE WIDTH TJ = 25 °C 0.01 0.1 1 10 4.5V 20µs PULSE WIDTH TJ = 150 °C 0.1 1 100 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 3.
PAGE 4
IRFR/U1N60A 10000 20 VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = C gs + C gd, C dsSHORTED C rss = C gd C oss = C ds + C gd C, Capacitance (pF) 1000 Ciss 100 C oss 10 ID = 1.4A VDS = 480V VDS = 300V VDS = 120V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 Crss 1 A 1 10 100 0 1000 0 2 8 10 12 14 100 10 OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) ISD , Reverse Drain Current (A) 6 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5.
PAGE 5
IRFR/U1N60A 1.6 RD VDS ID , Drain Current (A) VGS D.U.T. RG 1.2 + -VDD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 0.8 Fig 10a. Switching Time Test Circuit 0.4 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.02 0.01 0.1 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 0.01 0.00001 Notes: 1.
PAGE 6
15V DRIVER L VDS D.U.T RG + V - DD IAS 20V 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp A EAS , Single Pulse Avalanche Energy (mJ) IRFR/U1N60A 200 ID 0.65A 0.9A BOTTOM 1.4A TOP 160 120 80 40 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( °C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V 770 QGD VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T.
PAGE 7
IRFR/U1N60A Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + RG • • • • Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRFR/U1N60A D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 2.38 (.094) 2.19 (.086) 6.73 (.265) 6.35 (.250) 1.14 (.045) 0.89 (.035) -A1.27 (.050) 0.88 (.035) 5.46 (.215) 5.21 (.205) 0.58 (.023) 0.46 (.018) 4 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 1 2 10.42 (.410) 9.40 (.370) LEAD ASSIGNMENTS 1 - GATE 3 0.51 (.020) MIN. -B1.52 (.060) 1.15 (.045) 3X 1.14 (.045) 2X 0.76 (.030) 0.89 (.035) 0.64 (.025) 0.25 (.
PAGE 9
IRFR/U1N60A I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250) 2.38 (.094) 2.19 (.086) -A- 0.58 (.023) 0.46 (.018) 1.27 (.050) 0.88 (.035) 5.46 (.215) 5.21 (.205) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 4 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.52 (.060) 1.15 (.045) 1 2 3 -B- NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2.28 (.090) 1.91 (.075) 9.65 (.380) 8.89 (.350) 2 CONTROLLING DIMENSION : INCH.
PAGE 10
IRFR/U1N60A Tape & Reel Information TR TO-252AA TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig.